A Novel Self-Pinching Gate Biasing Scheme for Safe Operation and Characterization of GaN HEMTs

This letter presents a novel gate bias configuration for GaN HEMTs that ensures a safe operation of this kind of device by protecting the gate from forward turn-on. The bias circuit includes a simple series diode in the DC path that blocks any positive current from the gate, in other words it restricts the gate diode of the device to operate in forward bias. The new bias circuit ensures a safe operating condition of FET/HEMT transistors during forward turn-on while not hampering or degrading performance under normal operating condition.