A CMOS Direct Injection-Locked Frequency Divider With High Division Ratios

Author

Sim, Sanghoon ; Kim, Dong-Wook ; Hong, Songcheol

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol. (KAIST), Daejeon

Volume

19

Issue

5

fYear

2009

fDate

5/1/2009 12:00:00 AM

Firstpage

314

Lastpage

316

Abstract

A CMOS injection-locked frequency divider (ILFD) with high division ratios and high frequency operation is presented. It consists of a ring oscillator and injection capacitors. An input signal is directly injected through the capacitors into the feedback nodes of the ring oscillator. The proposed ILFD is fabricated in a 0.18 mum CMOS process and has a chip core size of 68 mum times 70 mum. It shows multiple division ratios of 3, 6, and 9. The operation frequency is from 2.2 to 30.95 GHz. At the maximum operation frequency, the ILFD has a locking range of 260 MHz with an input power of less than 0.25 dBm, a division ratio of 9, and a power consumption of 12.5 mW. The locking range increases up to 3.2 GHz as the division ratio and the operation frequency decrease.

Keywords

CMOS integrated circuits; frequency dividers; oscillators; CMOS injection-locked frequency divider; frequency 2.2 GHz to 30.95 GHz; frequency 260 MHz; high division ratios; injection capacitors; power 12.5 mW; ring oscillator; size 0.18 mum; CMOS; direct injection; frequency divider (FD); high division ratio; high frequency;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2009.2017603

Filename

4840521