Multi-valued static random access memory (SRAM) cell with single-electron and MOSFET hybrid circuit

A new multi-valued static random access memory (MVSRAM) cell with a hybrid circuit consisting of a single-electron (SE) and MOSFETs is proposed. The previously reported MVSRAM with an SE-MOSFET hybrid circuit needs two data lines, one bit line for write operations and one sense line for read operations, to improve the speed of the read-out operation, but the proposed cell has only one data line for read/write operations, resulting in a memory area that is much smaller than that of the previous cell, without any reduction of read-out speed.