Quality factor and inductance in differential IC implementations

Author

Bunch, Ryan L. ; Sanderson, David I. ; Raman, Sanjay

Author_Institution

RF Micro Devices, Greensboro, NC, USA

Volume

3

Issue

2

fYear

2002

fDate

6/1/2002 12:00:00 AM

Firstpage

82

Lastpage

92

Abstract

Monolithic inductors are widely used in microwave ICs and RFICs. Design considerations for inductors on low-resistivity substrates have been described. A π-equivalent model, used to account for various loss mechanisms, can be helpful in understanding differences in the definition of L and Q for single-ended and differential structures that exist in the literature. Specific uses for the equations in this article have been outlined. The L and Q for an example monolithic, differential inductor were extracted from measured two-port S-parameters using equations for differential configurations on low-resistivity substrates

Keywords

CMOS analogue integrated circuits; MMIC oscillators; Q-factor; S-parameters; field effect MMIC; inductance; inductors; voltage-controlled oscillators; Gilbert-cell mixer; RFIC; VCO; differential IC implementations; highly integrated RF transceivers; inductance-capacitance tank oscillators; microwave IC; monolithic inductor; negative resistance; quality factor; resonant tank circuits; spiral inductor; standard CMOS process; two-port S-parameters; Bonding; CMOS technology; Circuit topology; Inductance; Inductors; Microwave oscillators; Q factor; Radio frequency; Radiofrequency integrated circuits; Transceivers;

fLanguage

English

Journal_Title

Microwave Magazine, IEEE

Publisher

ieee

ISSN

1527-3342

Type

jour

DOI

10.1109/MMW.2002.1004055

Filename

1004055