Title :
Accurate RF extraction method for resistances and inductances of sub-0.1 μm CMOS transistors
Author_Institution :
Dept. of Electron. Eng., Hankuk Univ. of Foreign Studies, Kyungki-Do, South Korea
Abstract :
An accurate RF method using a linear regression of high-frequency Z-parameter equations at zero gate voltage is developed to extract resistances and inductances of sub-0.1 μm MOSFETs. Good agreement between the measured and modelled S-parameters is observed up to 30 GHz, verifying the accuracy of the RF method.
Keywords :
CMOS integrated circuits; MOSFET; S-parameters; electric resistance; inductance; radiofrequency integrated circuits; CMOS transistors; MOSFET; RF extraction method; RF method; high-frequency Z-parameter equation; inductance extraction; linear regression; resistance extraction; zero gate voltage;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20053024
