A High Gain 77 GHz Power Amplifier Operating at 0.7 V Based on 90 nm CMOS Technology

Author

Hamada, Yasuhiro ; Tanomura, Masahiro ; Ito, Masaharu ; Maruhashi, Kenichi

Author_Institution

NEC Corp., Kawasaki

Volume

19

Issue

5

fYear

2009

fDate

5/1/2009 12:00:00 AM

Firstpage

329

Lastpage

331

Abstract

A 77 GHz 90 nm CMOS power amplifier (PA) demonstrates a gain of 17.4 dB and a saturated output power of 5.8 dBm at a low supply voltage of 0.7 V. To take care of hot-carrier injection degradation, the supply voltage is reduced from a standard voltage of 1.0 V. The saturated output power is increased to 9.4 dBm with a linear gain of 20.6 dB at 1.0 V operation. The amplifier consists of three-stage common-source nMOSFETs with gate widths of 40, 80, and 160 mum. To our best knowledge, the developed PA shows the highest gain ever achieved for W-band CMOS amplifier. The measured temperature characteristics suggest that a simple compensation technique is possible by gate bias control.

Keywords

CMOS integrated circuits; MOSFET circuits; field effect MIMIC; hot carriers; low-power electronics; millimetre wave power amplifiers; nanoelectronics; wideband amplifiers; CMOS technology; W-band CMOS amplifier; frequency 77 GHz; gain 17.4 dB; gain 20.6 dB; gate bias control; high-gain power amplifier; hot-carrier injection degradation; low-supply voltage; size 160 mum; size 40 mum; size 80 mum; size 90 nm; temperature compensation technique; three-stage common-source nMOSFET; voltage 0.7 V; voltage 1.0 V; CMOSFET power amplifiers; millimeter wave power amplifiers;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2009.2017613

Filename

4840542