DocumentCode
753985
Title
High performance 1.28 μm GaInNAs double quantum well lasers
Author
Wei, Y.-Q. ; Sadeghi, M. ; Wang, S.M. ; Modh, P. ; Larsson, A.
Author_Institution
Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Goteborg, Sweden
Volume
41
Issue
24
fYear
2005
Firstpage
1328
Lastpage
1330
Abstract
The use of multiple quantum wells and GaAs barriers favours the temperature stability and modulation bandwidth of GaInNAs lasers. It is shown that a very low threshold current density and a high characteristic temperature can be achieved for GaInNAs/GaAs double quantum well lasers, emitting at 1.28 μm, when grown by molecular beam epitaxy under favourable conditions.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; quantum well lasers; semiconductor laser arrays; 1.28 micron; GaInNAs-GaAs; characteristic temperature; double quantum well lasers; modulation bandwidth; molecular beam epitaxy; multiple quantum wells; temperature stability; threshold current density;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20053210
Filename
1550116
Link To Document