Title :
Reliability study of InAs/InGaAs quantum dot diode lasers
Author :
Krestnikov, I. ; Livshits, D. ; Mikhrin, S. ; Kozhukhov, A. ; Kovsh, A. ; Ledentsov, N. ; Zhukov, A.
Author_Institution :
NL Nanosemicond. GmbH, Dortmund, Germany
Abstract :
Ridge-waveguide lasers with an InAs/InGaAs quantum dot active region have been subjected to accelerated ageing at 65 and 85°C. No sudden failure was found during the 2070 h test. Activation energy of 0.79 eV was estimated, suggesting the 40°C-lifetime >106 h.
Keywords :
III-V semiconductors; ageing; gallium arsenide; indium compounds; quantum dot lasers; reliability; ridge waveguides; waveguide lasers; 0.79 eV; 40 C; 65 C; 85 C; III-V semiconductors; InAs-InGaAs; accelerated ageing; quantum dot active region; quantum dot diode lasers; quantum dot lasers; reliability study; ridge-waveguide lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20053336
