• DocumentCode
    753994
  • Title

    Reliability study of InAs/InGaAs quantum dot diode lasers

  • Author

    Krestnikov, I. ; Livshits, D. ; Mikhrin, S. ; Kozhukhov, A. ; Kovsh, A. ; Ledentsov, N. ; Zhukov, A.

  • Author_Institution
    NL Nanosemicond. GmbH, Dortmund, Germany
  • Volume
    41
  • Issue
    24
  • fYear
    2005
  • Firstpage
    1330
  • Lastpage
    1331
  • Abstract
    Ridge-waveguide lasers with an InAs/InGaAs quantum dot active region have been subjected to accelerated ageing at 65 and 85°C. No sudden failure was found during the 2070 h test. Activation energy of 0.79 eV was estimated, suggesting the 40°C-lifetime >106 h.
  • Keywords
    III-V semiconductors; ageing; gallium arsenide; indium compounds; quantum dot lasers; reliability; ridge waveguides; waveguide lasers; 0.79 eV; 40 C; 65 C; 85 C; III-V semiconductors; InAs-InGaAs; accelerated ageing; quantum dot active region; quantum dot diode lasers; quantum dot lasers; reliability study; ridge-waveguide lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20053336
  • Filename
    1550117
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=753994