Title :
The impact of plasma-charging damage on the RF performance of deep-submicron MOSFET
Author :
Pantisano, Luigi ; Cheung, K.P. ; Roussel, Philippe J. ; Paccagnella, Alessandro
Author_Institution :
IMEC, Leuven, Belgium
fDate :
6/1/2002 12:00:00 AM
Abstract :
Integration of RF analog functions with CMOS digital circuits offers great advantages in terms of cost and performance. Plasma-charging damage is known to degrade MOSFET characteristics and can be expected to impact the RF performance as well. In this work, we present for the first time a thorough investigation of the impact of plasma-charging damage on the RF characteristics of deep-submicron MOSFET. Our result shows that, with ultra-thin gate oxide, a 400/spl deg/C forming gas annealing can completely recover the RF performance degradation due to plasma-charging damage.
Keywords :
MOSFET; annealing; plasma materials processing; 400 C; RF characteristics; deep-submicron MOSFET; forming gas annealing; plasma charging damage; ultra-thin gate oxide; Annealing; CMOS digital integrated circuits; Degradation; Hot carriers; MOSFET circuits; Plasma applications; Plasma properties; Plasma simulation; Radio frequency; Stress;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2002.1004218
