A poly-Si TFT fabricated by excimer laser recrystallization on floating active structure

Author

Cheon-Hong Kim ; In-Hyuk Song ; Woo-Jin Nam ; Min-Koo Han

Author_Institution

Sch. of Electr. Eng., Seoul Nat. Univ., South Korea

Volume

23

Issue

6

fYear

2002

fDate

6/1/2002 12:00:00 AM

Firstpage

315

Lastpage

317

Abstract

This letter reports a. new excimer laser annealing (ELA) method to produce large polycrystalline silicon (poly-Si) lateral grains exceeding 4 μm. A selectively floating amorphous silicon (a-Si) flint with a 50 nm-thick air-gap was irradiated by a single-pulse XeCl excimer laser and uniform lateral grains were grown due to the lateral thermal gradient caused by the low thermal conductivity of the air. A poly-Si thin-film transistor (TFT) with two high-quality 4.6 μm-long lateral grains was fabricated by employing the proposed ELA and high field-effect mobility of 331 cm²/Vsec was obtained due to. the high-quality grain structure.

Keywords

carrier mobility; crystal microstructure; elemental semiconductors; laser beam annealing; silicon; thermal conductivity; thin film transistors; 4.6 micron; 50 nm; Si; excimer laser annealing; excimer laser recrystallization; floating active structure; high field-effect mobility; high-quality grain structure; lateral grains; lateral thermal gradient; polysilicon TFT; single-pulse laser; thermal conductivity; Air gaps; Annealing; Grain size; Laser sintering; Semiconductor films; Silicon; Substrates; Temperature; Thermal conductivity; Thin film transistors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2002.1004220

Filename

1004220