10 A, 2.4 kV Power DiMOSFETs in 4H-SiC

Author

Ryu, Sei-Hyung ; Agarwal, Anant ; Richmond, James ; Palmour, John ; Saks, Nelson ; Williams, John

Author_Institution

Cree Inc, Durham, NC, USA

Volume

23

Issue

6

fYear

2002

fDate

6/1/2002 12:00:00 AM

Firstpage

321

Lastpage

323

Abstract

We report the characteristics of large area (3.3 /spl times/ 3.3 mm/sup 2/) high-voltage 4H-SiC DiMOSFETs. The MOSFETs show a peak MOS channel mobility of 22 cm/sup 2//V/spl middot/s and a threshold voltage of 8.5 V at room temperature. The DiMOSFETs exhibit an on-resistance of 4.2 m/spl Omega//spl middot/cm/sup 2/ at room temperature and 85 m/spl Omega//spl middot/cm/sup 2/ at 200/spl deg/C. Stable avalanche characteristics at approximately 2.4 kV are observed. An on-current of 10 A is measured on a 0.103 cm/sup 2/ device. High switching speed is also demonstrated. This suggests that the devices are capable of high-voltage, high-frequency, low-loss switching applications.

Keywords

carrier mobility; power MOSFET; silicon compounds; wide band gap semiconductors; 10 A; 2.4 kV; 200 C; 4H-SiC power DiMOSFET; SiC; avalanche characteristics; channel mobility; high-voltage high-frequency low-loss switching; on-current; on-resistance; threshold voltage; Aluminum; Annealing; Gold; Implants; JFETs; MOSFETs; Silicon carbide; Silicon devices; Temperature; Threshold voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2002.1004222

Filename

1004222