Copper gate hydrogenated amorphous silicon TFT with thin buffer layers

Author

Lee, Sang Wook ; Cho, Kyu Sik ; Choo, Byung Kwon ; Jang, Jin

Author_Institution

Dept. of Phys., Kyung Hee Univ., Seoul, South Korea

Volume

23

Issue

6

fYear

2002

fDate

6/1/2002 12:00:00 AM

Firstpage

324

Lastpage

326

Abstract

We demonstrated a Cu gate hydrogenated amorphous silicon thin-film transistor (TFT) with buffer layers. We introduced an AlN/Cu/Al/sub 2/O/sub 3/ multilayer for a gate of an a-Si:H TFT. The Al/sub 2/O/sub 3/ improves the adhesion to glass substrate and AlN protect the Cu diffusion to the TFT and plasma damage to Cu during plasma enhanced chemical vapor deposition of silicon-nitride. An a-Si:H TFT with a Cu gate exhibited a field effect mobility of 1.18 cm/sup 2/ V/s, a gate voltage swing of 0.87 V/dec., and a threshold voltage of 3.5 V.

Keywords

amorphous semiconductors; carrier mobility; copper; elemental semiconductors; hydrogen; plasma CVD coatings; silicon; thin film transistors; 3.5 V; AlN-Cu-Al/sub 2/O/sub 3/; AlN/Cu/Al/sub 2/O/sub 3/ multilayer; Cu diffusion; Si:H; a-Si:H TFT; adhesion; buffer layer; copper gate hydrogenated amorphous silicon thin film transistor; field effect mobility; gate voltage swing; glass substrate; plasma damage; plasma enhanced chemical vapor deposition; threshold voltage; Adhesives; Amorphous silicon; Buffer layers; Copper; Glass; Nonhomogeneous media; Plasma chemistry; Substrates; Thin film transistors; Threshold voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2002.1004223

Filename

1004223