• DocumentCode
    754120
  • Title

    Bend loss attenuator by carrier injection in InGaAsP/InP

  • Author

    Ng, S. ; Abdalla, S. ; Barrios, P. ; Delâge, A. ; Janz, S. ; McKinnon, R. ; Syrett, B.

  • Author_Institution
    Dept. of Electron., Carleton Univ., Ont., Canada
  • Volume
    41
  • Issue
    24
  • fYear
    2005
  • Firstpage
    1348
  • Lastpage
    1350
  • Abstract
    A compact InGaAsP/InP waveguide bend loss attenuator with electrically modulated bend loss is demonstrated. The carrier injection device exhibits better than 15 dB modulation and <20 ns response time. The bend loss attenuator requires less than half the current of a comparable straight waveguide attenuator to achieve 3 dB attenuation.
  • Keywords
    III-V semiconductors; charge injection; gallium arsenide; indium compounds; optical attenuators; optical waveguide components; waveguide attenuators; III-V semiconductors; InGaAsP-InP; carrier injection device; chemical vapour deposition; waveguide bend loss attenuator;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20053357
  • Filename
    1550129
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=754120