The modeling of thin-film bulk acoustic wave resonators using the FDTD method

Author

Seo, Ki-wone ; Ju, Saehoon ; Kim, Hyeongdong

Author_Institution

China Joint Venture Lab., Mobile Handsets Co., Kyonggido, South Korea

Volume

23

Issue

6

fYear

2002

fDate

6/1/2002 12:00:00 AM

Firstpage

327

Lastpage

329

Abstract

The finite-difference time-domain (FDTD) technique has been applied to analyze electromechanical phenomena of thin-film bulk acoustic wave resonators (TFBARs) for the first time. To simulate several TFBARs that have one-dimensional (1-D) piezoelectric material variations, current-driven governing equations are discretized in spatial and temporal domain. The impedance characteristics are obtained by the proposed method and compared with the analytical solutions of the 1-D Mason model. Also, the values of lumped elements for the Butterworth Van Dyke (BVD) equivalent circuit are extracted. The results show that the proposed scheme has the potential to analyze the characteristics of arbitrary piezoelectric material embedded structures.

Keywords

acoustic resonators; bulk acoustic wave devices; equivalent circuits; finite difference time-domain analysis; thin film devices; 1D Mason model; Butterworth Van Dyke equivalent circuit; electromechanical phenomena; embedded structure; finite-difference time-domain model; impedance characteristics; one-dimensional piezoelectric material; thin-film bulk acoustic wave resonator; Acoustic waves; Equations; Film bulk acoustic resonators; Finite difference methods; Impedance; Levee; Piezoelectric films; Piezoelectric materials; Time domain analysis; Transistors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2002.1004224

Filename

1004224