Title :
Gate-all-around MOSFETs: lateral ultra-narrow (≤10 nm) fin as channel body
Author :
Singh, N. ; Agarwal, A. ; Bera, L.K. ; Kumar, R. ; Lo, G.Q. ; Narayanan, B. ; Kwong, D.L.
Author_Institution :
Inst. of Microelectron., Singapore
Abstract :
The fabrication of lateral ultra-narrow fin body (thickness ≤10 nm) gate-all-around MOSFETs, which exhibit excellent gate electrostatic control over the channel, is presented. The narrow fins were formed using alternating phase DUV lithography and low temperature oxidation of Si. The device characteristics are completely free from substrate bias effects.
Keywords :
MOSFET; silicon; ultraviolet lithography; DUV lithography; Si; gate electrostatic control; gate-all-around MOSFET; lateral ultra-narrow fin body; low temperature oxidation; substrate bias effect;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20053195
