Charge transport mechanism in metal-nitride-oxide-silicon structures

Author

Nasyrov, K.A. ; Gritsenko, V.A. ; Kim, M.K. ; Chae, H.S. ; Chae, S.D. ; Ryu, W.I. ; Sok, J.H. ; Lee, J.-W. ; Kim, B.M.

Author_Institution

.Inst. of Autom. & Electrometry, Novosibirsk, Russia

Volume

23

Issue

6

fYear

2002

fDate

6/1/2002 12:00:00 AM

Firstpage

336

Lastpage

338

Abstract

A charge transport mechanism in double oxide-nitride dielectric was studied experimentally and theoretically. We have found that widely accepted Frenkel effect or thermally assisted tunneling could not explain experimental current-field-temperature dependences. For the first time we demonstrate that ionization mechanism of deep traps, which control charge transport in silicon nitride, is due to multiphonon process.

Keywords

EPROM; MIS structures; deep levels; dielectric thin films; ionisation; semiconductor device models; 1D model; EEPROM; MNOS devices; SiO/sub 2/-Si/sub 3/N/sub 4/; SiO/sub 2//Si/sub 3/N/sub 4/ stacked dielectric; charge transport mechanism; current-field-temperature dependences; deep traps; double oxide-nitride dielectric; ionization mechanism; multiphonon process; multiphonon trap ionization model; Charge carrier processes; Dielectrics; EPROM; Electrodes; Electron traps; Ionization; Leakage current; Random access memory; Silicon; Tunneling;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2002.1004227

Filename

1004227