Analytical quantum mechanical model for accumulation capacitance of MOS structures

We propose a new analytical model to quantitatively simulate capacitance-voltage (C-V) characteristics under accumulation conditions in metal-oxide-semiconductor structures. Based on the exponential potential, we have obtained the exact solution of the Schrodinger equation for all bound states that are consistent with quantum statistics and Gauss´ law. The calculated C-V curves are in good agreement with measured ones by using the proposed model. One can easily obtain the results equivalent to full numerical solutions based on our model.