Title :
Phase-Noise-Compensated Optical Frequency-Domain Reflectometry
Author :
Fan, Xinyu ; Koshikiya, Yusuke ; Ito, Fumihiko
Author_Institution :
NTT Access Network Service Syst. Labs., NTT Corp., Tsukuba
fDate :
6/1/2009 12:00:00 AM
Abstract :
The theory of phase-noise-compensated optical frequency-domain reflectometry (PNC-OFDR), a novel type of optical frequency-domain reflectometry (OFDR) with a measurement range much longer than the laser coherence length, is described, and the signal and noise spectral densities are deduced for a discussion of signal-to-noise ratio (SNR). The analysis of PNC-OFDR shows the possibility of obtaining a high SNR by using many reference signals for phase-noise compensation. By using a ldquoconcatenately generated phaserdquo (CGP), only a single auxiliary interferometer is needed for phase-noise compensation, and other reference signals can be easily generated by performing a calculation based on signal use obtained from the single auxiliary interferometer. An experimental investigation shows the feasibility of using CGPs for PNC-OFDR by dividing the fiber under test into several sections for phase-noise compensation. Moreover, the influence of strong reflection events on Rayleigh backscattering is discussed by considering the dead zone caused by a fiber/air Fresnel reflection. It is shown theoretically that a dead zone that has no influence on the neighboring section can be achieved by using suitable parameters in an actual system.
Keywords :
laser noise; phase noise; reflectometry; Fresnel reflection; Rayleigh backscattering; concatenately generated phase; dead zone; optical frequency domain reflectometry; phase-noise compensation; signal-to-noise ratio; strong reflection; Density measurement; Frequency domain analysis; Frequency measurement; Fresnel reflection; Optical fiber testing; Optical interferometry; Optical noise; Reflectometry; Signal generators; Signal to noise ratio; Optical fiber measurements; optical frequency-domain reflectometry (OFDR); phase noise;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2009.2013114