Title :
Electrooptical Modulator Fabricated by Gallium Diffusion in Lithium Niobate
Author :
Huang, Wen-Hung ; Lin, Chia-Wei ; Wang, Way-Seen
Author_Institution :
Grad. Inst. of Photonics & Optoelectron., Nat. Taiwan Univ., Taipei
fDate :
7/1/2008 12:00:00 AM
Abstract :
Mach-Zehnder modulators fabricated by gallium diffusion in y-cut lithium niobate (LiNbO) are presented. The measured halfwave voltages are 6.2 and 3.2 V when the electrode lengths are 0.4 and 0.8 cm, respectively. By calculating the overlap integral between the modulating electric and the guided optical fields, the value of the electrooptic coefficient is found in good agreement with that of the bulk LiNbO, which indicates no significant degradation in is induced by the in-diffused gallium atoms.
Keywords :
Mach-Zehnder interferometers; electro-optical effects; electro-optical modulation; gallium; lithium compounds; optical fabrication; optical waveguides; Ga; LiNbO3; Mach-Zehnder modulator; electrooptic coefficient; electrooptical modulator fabrication; gallium-diffused waveguide; halfwave voltage; lithium niobate; voltage 3.2 V; voltage 6.2 V; Atom optics; Electrodes; Electrooptic modulators; Electrooptical waveguides; High speed optical techniques; Lithium niobate; Optical modulation; Optical polarization; Optical sensors; Optical waveguides; Electrooptic coefficient; Mach–Zehnder modulator; gallium-diffused waveguide; lithium niobate;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2008.924902
