Title :
Measurement and Modeling of a High-Linearity Modified Uni-Traveling Carrier Photodiode
Author :
Beling, Andreas ; Pan, Huapu ; Chen, Hao ; Campbell, Joe C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Virginia Univ., Charlottesville, VA
fDate :
7/15/2008 12:00:00 AM
Abstract :
The third-order intermodulation distortions of an InGaAs-InP charge compensated modified uni-traveling carrier photodiode (PD) are characterized using a two-tone setup. At 310-MHz modulation frequency, the third-order local intercept point (IP3) reaches 52 dBm and remains above 35 dBm up to 21GHz. Based on experimental results for the dependence of responsivity and PD capacitance on bias voltage and photocurrent, we use a simple equivalent circuit model to simulate the frequency characteristics of the intermodulation distortions.
Keywords :
III-V semiconductors; capacitance; charge compensation; equivalent circuits; frequency modulation; gallium arsenide; indium compounds; intermodulation distortion; optical modulation; photoconductivity; photodiodes; bias voltage; capacitance; charge compensated modified uni-traveling carrier photodiode; equivalent circuit model; frequency 21 GHz; modulation frequency; photocurrent; third-order intermodulation distortions; third-order local intercept point; two-tone setup; Distortion measurement; Distributed feedback devices; Equivalent circuits; Frequency modulation; Intermodulation distortion; Linearity; Photoconductivity; Photodiodes; Radio frequency; Voltage; InGaAs; linearity; photodiode (PD); third-order intermodulation distortion (IMD3);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2008.926016
