Title :
Periodic mode shift in vertical cavities grown by molecular beam epitaxy
Author :
Eng, L.E. ; Toh, K. ; Bacher, K. ; Harris, J.S., Jr. ; Chang-Hasnain, C.J.
Author_Institution :
Edward L. Ginzton Lab., Stanford Univ., CA, USA
fDate :
3/1/1995 12:00:00 AM
Abstract :
We demonstrate a spatially-chirped resonant wavelength in vertical cavities grown by molecular beam epitaxy (MBE). The wavelength shift is achieved by varying the GaAs growth rate across the wafer using backside temperature patterns. We have demonstrated, for the first time, 8-nm periodic cavity mode shifts in GaAs-AlAs Fabry-Perot vertical cavities. The measured rate of mode shift is 5.3 nm/mm. Patterns transfer with a resolution on the millimeter scale.<>
Keywords :
Fabry-Perot resonators; III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; laser modes; molecular beam epitaxial growth; semiconductor growth; semiconductor laser arrays; semiconductor lasers; GaAs growth rate; GaAs-AlAs; GaAs-AlAs Fabry-Perot vertical cavities; MBE; backside temperature patterns; laser cavity resonators; millimeter scale; mode shift; molecular beam epitaxy; patterns transfer; periodic cavity mode shifts; periodic mode shift; resolution; spatially-chirped resonant wavelength; vertical cavities; wavelength shift; Gallium arsenide; Indium; Molecular beam epitaxial growth; Optical arrays; Substrates; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers; Wafer bonding; Wavelength division multiplexing;
Journal_Title :
Photonics Technology Letters, IEEE
