• DocumentCode
    754568
  • Title

    Excimer Laser Projection Photoablation Patterning of Metal Thin Films for Fabrication of Microelectronic Devices and Displays

  • Author

    Chae, Junghun ; Jain, Kanti

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL
  • Volume
    20
  • Issue
    14
  • fYear
    2008
  • fDate
    7/15/2008 12:00:00 AM
  • Firstpage
    1216
  • Lastpage
    1218
  • Abstract
    A nonlithographic process is demonstrated for patterning Al, Cr, Cu, Ni, Ti, and W thin films, which are widely used in microelectronic and display fabrication. A projection photoablation process using 248-nm-deep ultraviolet radiation from a KrF excimer laser was used to pattern a polyimide film coated on a SiN layer deposited on glass. The photoablation-patterned polyimide film was used as a sacrificial layer in a lift-off patterning process for the metal films, which resulted in clean metal patterns with fine line-edge definition being fabricated after lift-off. This process provides a simpler and more economical patterning technique compared to conventional lithography methods, eliminating the developing and etching steps.
  • Keywords
    aluminium; chromium; copper; flat panel displays; integrated circuit technology; laser ablation; metallic thin films; nanopatterning; nickel; polymer films; titanium; tungsten; ultraviolet radiation effects; Al; Cr; Cu; Ni; Ti; W; excimer laser projection photoablation patterning; lift-off patterning process; metal thin films; microelectronic device fabrication; microelectronic display fabrication; nonlithographic process; polyimide film; ultraviolet radiation; Chromium; Displays; Glass; Lithography; Microelectronics; Optical device fabrication; Polyimides; Silicon compounds; Thin film devices; Transistors; Cost-effective fabrication; displays; excimer lasers; microelectronics; patterning; photoablation;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2008.925540
  • Filename
    4544848