Title :
Strained-layer InGaAs-GaAs-AlGaAs lasers with monolithically integrated photodiodes by selective-area MOCVD
Author :
Lammert, R.M. ; Mena, P.V. ; Forbes, D.V. ; Osowski, M.L. ; Kang, S.M. ; Coleman, J.J.
Author_Institution :
Microelectron. Lab., Illinois Univ., Urbana, IL, USA
fDate :
3/1/1995 12:00:00 AM
Abstract :
Fabrication, design, and operation of strained layer, InGaAs-GaAs-AlGaAs lasers with monolithically integrated photodiodes fabricated by selective-area epitaxy are presented. Threshold currents as low as 8 mA (/spl sim/300 A/cm2) were obtained for uncoated devices operating cw at room temperature. A responsivity of 71 μA/mW was obtained for a device with a photodiode etched facet angle of 3/spl deg/ and a photodiode bias of 0 V.
Keywords :
III-V semiconductors; aluminium compounds; chemical vapour deposition; gallium arsenide; indium compounds; integrated optoelectronics; optical design techniques; optical fabrication; photodiodes; semiconductor lasers; 0 V; 8 mA; InGaAs-GaAs-AlGaAs; monolithically integrated photodiodes; photodiode bias; photodiode etched facet angle; responsivity; room temperature; selective-area MOCVD; selective-area epitaxy; strained-layer InGaAs-GaAs-AlGaAs lasers; threshold currents; uncoated devices; Diode lasers; Epitaxial growth; Etching; Face detection; Gallium arsenide; MOCVD; Optical design; Photodiodes; Power generation; Temperature;
Journal_Title :
Photonics Technology Letters, IEEE
