Strained-layer InGaAs-GaAs-AlGaAs lasers with monolithically integrated photodiodes by selective-area MOCVD

Author

Lammert, R.M. ; Mena, P.V. ; Forbes, D.V. ; Osowski, M.L. ; Kang, S.M. ; Coleman, J.J.

Author_Institution

Microelectron. Lab., Illinois Univ., Urbana, IL, USA

Volume

7

Issue

3

fYear

1995

fDate

3/1/1995 12:00:00 AM

Firstpage

247

Lastpage

250

Abstract

Fabrication, design, and operation of strained layer, InGaAs-GaAs-AlGaAs lasers with monolithically integrated photodiodes fabricated by selective-area epitaxy are presented. Threshold currents as low as 8 mA (/spl sim/300 A/cm²) were obtained for uncoated devices operating cw at room temperature. A responsivity of 71 μA/mW was obtained for a device with a photodiode etched facet angle of 3/spl deg/ and a photodiode bias of 0 V.

Keywords

III-V semiconductors; aluminium compounds; chemical vapour deposition; gallium arsenide; indium compounds; integrated optoelectronics; optical design techniques; optical fabrication; photodiodes; semiconductor lasers; 0 V; 8 mA; InGaAs-GaAs-AlGaAs; monolithically integrated photodiodes; photodiode bias; photodiode etched facet angle; responsivity; room temperature; selective-area MOCVD; selective-area epitaxy; strained-layer InGaAs-GaAs-AlGaAs lasers; threshold currents; uncoated devices; Diode lasers; Epitaxial growth; Etching; Face detection; Gallium arsenide; MOCVD; Optical design; Photodiodes; Power generation; Temperature;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.372735

Filename

372735