Numerical analysis for conduction mechanism of thin oxide-nitride-oxide films formed on rough poly-Si

Author

Matsuo, N. ; Fujiwara, H. ; Miyoshi, T. ; Koyanagi, T.

Author_Institution

Dept. of Electr. & Electron. Eng., Yamaguchi Univ., Ube, Japan

Volume

17

Issue

2

fYear

1996

Firstpage

56

Lastpage

58

Abstract

The conduction mechanism of thin oxide-nitride-oxide films formed on rough poly-Si, in which grain sizes are not uniform, is studied for low and negative applied voltage. By assuming an electric field concentration at the convex edge of the plate electrode, the numerical analysis for direct tunneling (D.T.) is carried out. From the results, it is thought that the D.T. currents to the convex edge of the plate electrode dominate the total leakage currents.

Keywords

electrical conductivity; insulating thin films; leakage currents; semiconductor-insulator boundaries; tunnelling; Si; SiO/sub 2/-Si/sub 3/N/sub 4/-SiO/sub 2/; conduction; direct tunneling; electric field; grain sizes; leakage current; numerical analysis; oxide-nitride-oxide thin film; plate electrode; rough poly-Si surface; Capacitors; Conductive films; Electrodes; Grain size; Leakage current; Numerical analysis; Rough surfaces; Surface roughness; Tunneling; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.484122

Filename

484122