Mobility simulation of a novel Si/SiGe FET structure

Author

Abramo, Antonio ; Bude, Jeff ; Venturi, Franco ; Pinto, Mark R.

Author_Institution

Dept. of Electron., Bologna Univ., Italy

Volume

17

Issue

2

fYear

1996

Firstpage

59

Lastpage

61

Abstract

The theoretical study of a novel Si/SiGe structure combining the advantages of buried channel MOS devices and conventional SiGe FET´s is presented. A self-consistent one-dimensional Schrodinger-Poisson simulator has been developed to evaluate the gate dependence of electron effective mobility in the zero-field limit. Room temperature peak mobility values greater than 2800 cm/sup 2//Vs are predicted. The proposed structure shows also good turn-on characteristic and linear transconductance behavior, which represents a significant feature in view of possible technology applications.

Keywords

Ge-Si alloys; MOSFET; electron mobility; elemental semiconductors; semiconductor device models; semiconductor materials; silicon; simulation; 1D Schrodinger-Poisson simulator; Si-SiO/sub 2/-SiGe-Si-SiGe; Si/SiGe FET structure; electron effective mobility; gate dependence; linear transconductance behavior; mobility simulation; room temperature peak mobility; turn-on characteristic; zero-field limit; Acoustic scattering; Electron mobility; FETs; Germanium silicon alloys; Optical scattering; Particle scattering; Rough surfaces; Silicon germanium; Surface roughness; Temperature;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.484123

Filename

484123