Title :
InAs/AlSb/GaSb resonant interband tunneling diodes and Au-on-InAs/AlSb-superlattice Schottky diodes for logic circuits
Author :
Chow, D.H. ; Dunlap, H.L. ; Williamson, W., III ; Enquist, S. ; Gilbert, B.K. ; Subramaniam, S. ; Lei, P.-M. ; Bernstein, G.H.
Author_Institution :
Hughes Res. Labs., Malibu, CA, USA
Abstract :
Integrated resonant interband tunneling (RIT) and Schottky diode structures, based on the InAs/GaSb/AlSb heterostructure system, are demonstrated for the first time. The RIT diodes are advantageous for logic circuits due to the relatively low bias voltages (/spl sim/100 mV) required to attain peak current densities in the mid-10/sup 4/ A/cm/sup 2/ range. The use of n-type InAs/AlSb superlattices for the semiconducting side of Schottky barrier devices provides a means for tailoring the barrier height for a given circuit architecture. The monolithically integrated RIT/Schottky structure is suitable for fabrication of a complete diode logic family (AND, OR, XOR, INV).
Keywords :
III-V semiconductors; Schottky diodes; aluminium compounds; gallium compounds; gold; indium compounds; logic gates; resonant tunnelling diodes; semiconductor superlattices; Au-on-InAs/AlSb-superlattice Schottky diodes; InAs-AlSb-Au; InAs-AlSb-GaSb; InAs/AlSb/GaSb resonant interband tunneling diodes; barrier height; bias voltages; current densities; diode logic; logic circuits; monolithic integration; Current density; Logic circuits; Low voltage; Resonance; Schottky barriers; Schottky diodes; Semiconductivity; Semiconductor diodes; Semiconductor superlattices; Tunneling;
Journal_Title :
Electron Device Letters, IEEE
