Transconductance amplifier structures with very small transconductances: a comparative design approach

Author

Veeravalli, Anand ; Sánchez-Sinencio, Edgar ; Silva-Martínez, José

Author_Institution

Texas Instrum. Inc., Dallas, TX, USA

Volume

37

Issue

6

fYear

2002

fDate

6/1/2002 12:00:00 AM

Firstpage

770

Lastpage

775

Abstract

A family of CMOS operational transconductance amplifiers (OTAs) has been designed for very small G_m´s (of the order of nanoamperes per volt) with transistors operating in moderate inversion. Several OTA design schemes such as conventional, using current division, floating-gate, and bulk-driven techniques are discussed. A detailed comparison has also been made among these schemes in terms of performance characteristics such as power consumption, active silicon area, and signal-to-noise ratio. The transconductance amplifiers have been fabricated in a 1.2-μm n-well CMOS process and operate at a power supply of 2.7 V. Chip test results are in good agreement with theoretical results

Keywords

CMOS analogue integrated circuits; circuit CAD; circuit simulation; integrated circuit design; low-power electronics; operational amplifiers; 1.2 micron; 2.7 V; active silicon area; bulk-driven techniques; comparative design approach; current division; floating-gate; moderate inversion; n-well CMOS process; operational amplifiers; performance characteristics; power consumption; signal-to-noise ratio; transconductance amplifier structures; Active filters; Capacitors; Circuit testing; Energy consumption; Frequency; Operational amplifiers; Signal to noise ratio; Silicon; Topology; Transconductance;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.2002.1004582

Filename

1004582