Title :
Design and fabrication of the self-aligned opposed gate-source transistor
Author :
Rauschenbach, Kurt ; Lee, Charles A.
Author_Institution :
Cornell Univ., Ithaca, NY, USA
fDate :
2/1/1992 12:00:00 AM
Abstract :
The authors report on the modeling, design, and successful realization of the self-aligned opposed gate-source transistor (OGST). An advanced distributed traveling-wave mathematical model of the OGST is used to determine the optimal gate width for 94-GHz operation. A novel fabrication process is described that utilizes a new lithography technique, resonant refractive index lithography, to self-align a 0.15-μm source to a 0.3-μm gate on opposite sides of a 0.2-μm-thick GaAs active layer. The authors report on the DC operating characteristics of the self-aligned OGST and compare these results with theoretical models
Keywords :
III-V semiconductors; field effect transistors; gallium arsenide; semiconductor device models; solid-state microwave devices; 0.15 to 0.3 micron; 94 GHz; DC operating characteristics; EHF; GaAs active layer; OGST; fabrication process; lithography technique; mathematical model; modeling; opposed gate-source transistor; optimal gate width; resonant refractive index lithography; self-aligned transistors; semiconductors; traveling wave model; traveling wave transistors; Distributed parameter circuits; FETs; Fabrication; Frequency; Geometry; Impedance; Lithography; Mathematical model; Power transmission lines; Transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
