Design and fabrication of the self-aligned opposed gate-source transistor

Author

Rauschenbach, Kurt ; Lee, Charles A.

Author_Institution

Cornell Univ., Ithaca, NY, USA

Volume

39

Issue

2

fYear

1992

fDate

2/1/1992 12:00:00 AM

Firstpage

219

Lastpage

225

Abstract

The authors report on the modeling, design, and successful realization of the self-aligned opposed gate-source transistor (OGST). An advanced distributed traveling-wave mathematical model of the OGST is used to determine the optimal gate width for 94-GHz operation. A novel fabrication process is described that utilizes a new lithography technique, resonant refractive index lithography, to self-align a 0.15-μm source to a 0.3-μm gate on opposite sides of a 0.2-μm-thick GaAs active layer. The authors report on the DC operating characteristics of the self-aligned OGST and compare these results with theoretical models

Keywords

III-V semiconductors; field effect transistors; gallium arsenide; semiconductor device models; solid-state microwave devices; 0.15 to 0.3 micron; 94 GHz; DC operating characteristics; EHF; GaAs active layer; OGST; fabrication process; lithography technique; mathematical model; modeling; opposed gate-source transistor; optimal gate width; resonant refractive index lithography; self-aligned transistors; semiconductors; traveling wave model; traveling wave transistors; Distributed parameter circuits; FETs; Fabrication; Frequency; Geometry; Impedance; Lithography; Mathematical model; Power transmission lines; Transistors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.121676

Filename

121676