Title :
Numerical analysis of the looping effect in GaAs MESFET´s
Author :
Lo, Shih-Hsien ; Lee, Chien-Ping
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsin-Chu, Taiwan
fDate :
2/1/1992 12:00:00 AM
Abstract :
The looping effect in the ID-VD (drain-current-drain-voltage) characteristics of GaAs MESFETs on semi-insulating substrates has been studied using a two-dimensional numerical analysis. Both the transient and the steady-state behaviors of the looping phenomenon were simulated. Peak voltage- and frequency-dependent behaviors of the looping effect are analyzed. The ID-VD loop is due to the difference in the distribution of ionized EL2 concentration when the drain voltage rises and falls because of the trapping process of EL2s. The output conductance is also found to be frequency-dependent and is explained by the frequency-dependent modulation of the potential barrier height at the channel/substrate interface due to the drain-voltage variation
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; semiconductor device models; EL2 concentration; GaAs; MESFETs; channel/substrate interface; drain current hysteresis; drain-voltage variation; frequency-dependent behaviors; frequency-dependent modulation; looping effect; models; output conductance; peak voltage dependent behavior; potential barrier height; semi-insulating substrates; semiconductors; two-dimensional numerical analysis; Electron emission; Electron mobility; Electron traps; Frequency; Gallium arsenide; MESFETs; Numerical analysis; Radioactive decay; Steady-state; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
