Title :
Photonic-crystal surface-emitting laser near 1.55 μm on gold-coated silicon wafer
Author :
Vecchi, G. ; Raineri, F. ; Sagnes, I. ; Lee, K.-H. ; Guilet, S. ; Gratiet, L. Le ; Van Laere, F. ; Roelkens, G. ; Van Thourhout, Dries ; Baets, R. ; Levenson, A. ; Raj, R.
Author_Institution :
Lab. de Photonique et de Nanostruct., CNRS, Marcoussis
Abstract :
An InP/InGaAs-based photonic band-edge laser bonded on silicon operating near 1.55 mum is presented. A gold reflector positioned below the slab containing the active layer reduces the optical losses of the Bloch-mode resonator. As a result, a quality factor exceeding 8000 is obtained at transparency leading to a laser threshold as low as 3.4 muJ/cm2
Keywords :
III-V semiconductors; gallium arsenide; gold; indium compounds; laser cavity resonators; optical losses; photonic crystals; silicon; surface emitting lasers; 1.55 micron; Bloch-mode resonator; InP-InGaAs; Si-Au; gold reflector; gold-coated silicon wafer; optical losses reduction; photonic band-edge laser; photonic-crystal surface-emitting laser; quality factor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20073816
