Title :
A 60-GHz MMIC-compatible TED-oscillator
Author :
Springer, A.L. ; Diskus, C.G. ; Lubke, K. ; Thim, H.W.
Author_Institution :
Inst. Mikroelektrik, Johannes Kepler Univ., Linz, Austria
fDate :
4/1/1995 12:00:00 AM
Abstract :
Experimental results achieved with planar GaAs transferred electron oscillators at V-band frequencies are reported in this contribution. The active devices are MESFET-like structures with a Schottky-gate controlling the electron injection into the drift region. The electron injection is adjusted to a level yielding a frequency independent negative differential resistance which is exploited for millimeter-wave power generation. The highest measured CW output power and efficiency are 6.72 mW and 1.3% at 60.33 GHz, respectively. These results are comparable to those obtained with transistor oscillators which are much more difficult to fabricate due to their extremely small dimensions in the 0.1 μm range.
Keywords :
Gunn oscillators; III-V semiconductors; Schottky barriers; active networks; field effect MIMIC; gallium arsenide; millimetre wave oscillators; negative resistance devices; 1.3 percent; 6.72 mW; 60 to 60.33 GHz; EHF; GaAs; GaAs transferred electron oscillators; MESFET-like structures; MM-wave monolithic IC; MMIC-compatible TED-oscillator; Schottky-gate; V-band frequencies; drift region; electron injection; field effect controlled TED; frequency independent NDR; millimeter-wave power generation; negative differential resistance; Electrical resistance measurement; Electrons; Frequency; Gallium arsenide; MESFETs; Millimeter wave measurements; Millimeter wave transistors; Oscillators; Power generation; Power measurement;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
