A monolithic HBT-regulated HEMT LNA by selective MBE

Author

Streit, D.C. ; Kobayashi, K.W. ; Oki, A.R. ; Umemoto, D.K.

Author_Institution

Electron. Syst. & Technol. Div., TRW Inc., Redondo Beach, CA, USA

Volume

5

Issue

4

fYear

1995

fDate

4/1/1995 12:00:00 AM

Firstpage

124

Lastpage

126

Abstract

We demonstrate here the monolithic integration of an HBT operational amplifier and a HEMT low-noise amplifier to achieve an elegant single-chip solution to the problem of HEMT current regulation. We have developed a novel method of achieving monolithic HEMT-HBT integration by selective MBE and a unique merged-processing technology. Pseudomorphic 0.2 μm gate-length InGaAs-GaAs-AlGaAs HEMT´s and 2×10 μm² GaAs-AlGaAs-InGaAs HBT devices have been incorporated into the same microwave circuit for the first time with no degradation in the intrinsic device performance of either device technology.

Keywords

MMIC amplifiers; heterojunction bipolar transistors; high electron mobility transistors; molecular beam epitaxial growth; operational amplifiers; 0.2 micron; GaAs-AlGaAs-InGaAs; HBT operational amplifier; HBT-regulated HEMT LNA; HEMT current regulation; HEMT low-noise amplifier; InGaAs-GaAs-AlGaAs; merged-processing technology; microwave IC; monolithic LNA; monolithic integration; pseudomorphic HEMT; selective MBE; Current control; Degradation; HEMTs; Heterojunction bipolar transistors; Low-noise amplifiers; Microwave circuits; Microwave devices; Microwave technology; Monolithic integrated circuits; Operational amplifiers;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.372813

Filename

372813