Room-temperature CW operation of InGaAsP lasers on Si fabricated by wafer bonding

Author

Wada, H. ; Kamijoh, T.

Author_Institution

Optoelectron. Oki Lab., Real World Comput. Partnership, Tokyo, Japan

Volume

8

Issue

2

fYear

1996

Firstpage

173

Lastpage

175

Abstract

1.3-μm InGaAsP-InP lasers have been successfully fabricated on Si substrates by wafer bonding with heat treatment at 400/spl deg/C. A pressure of 4 kg/cm² has been applied on the wafers before the heat treatment and this pressure application has enabled us to achieve bonding strength required for the device fabrication even when the bonding temperature is as low as 400/spl deg/C. Room-temperature continuous-wave operation with threshold current of 49 mA has been achieved for 7-μm-wide mesa lasers.

Keywords

III-V semiconductors; gallium arsenide; heat treatment; indium compounds; optical fabrication; semiconductor lasers; substrates; wafer bonding; 1.3 mum; 400 C; 49 mA; 7 mum; InGaAsP lasers; InGaAsP-InP; Si; Si substrates; bonding strength; bonding temperature; device fabrication; heat treatment; mesa lasers; pressure application; room-temperature CW operation; room-temperature continuous-wave operation; wafer bonding; Adhesives; Heat treatment; Indium phosphide; Optical propagation; Semiconductor lasers; Substrates; Surface emitting lasers; Temperature; Very large scale integration; Wafer bonding;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.484231

Filename

484231