All selective MOVPE grown BH-LDs fabricated by the novel self-alignment process

Author

Sakata, Y. ; Delansay, P. ; Inomoto, Y. ; Yamaguchi, M. ; Murakami, Toshiyuki ; Hasumi, H.

Author_Institution

ULSI Device Dev. Labs., NEC Corp., Shiga, Japan

Volume

8

Issue

2

fYear

1996

Firstpage

179

Lastpage

181

Abstract

1.3 μm-strained MQW BH LDs with a current blocking structure have been developed by selective MOVPE and a newly developed self-alignment process; we call these devices ASM (all selective MOVPE grown)-BH-LDs. The fabrication process, which completely eliminates semiconductor etching, is very promising to realize high-performance LDs with excellent uniformity and reproducibility. The light output power was remarkably improved by a factor of two, compared with previous selective MOVPE-LDs.

Keywords

molecular beam epitaxial growth; optical communication equipment; optical fabrication; quantum well lasers; semiconductor growth; 1.3 mum; BH-LDs; all selective MOVPE grown; current blocking structure; light output power; quantum well lasers; reproducibility; self-alignment process; semiconductor etching; strained MQW BH LDs; Epitaxial growth; Epitaxial layers; Etching; Laboratories; National electric code; Optical buffering; Optical device fabrication; Power generation; Quantum well devices; Reproducibility of results;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.484233

Filename

484233