Title :
Single-frequency, single-spatial-mode ROW-DFB diode laser arrays
Author :
Nesnidal, M.P. ; Mawst, L.J. ; Bhattacharya, A. ; Botez, D. ; DiMarco, L. ; Connolly, J.C. ; Abeles, J.H.
Author_Institution :
Dept. of Electr. Eng., Wisconsin Univ., Madison, WI, USA
Abstract :
Single-frequency, stable single-spatial-mode operation from large-aperture (40-60 μm) index-guided devices is demonstrated from resonant antiguided phase-locked InGaAs-InGaP-GaAs diode-laser arrays incorporating 2nd-order distributed-feedback gratings (i.e., ROW-DFB arrays). The devices operate in a single-spatial-mode up to 3.6×threshold, and truly single-mode (i.e., single-spatial-mode and single-frequency) up to 2×threshold, For 40 (60)-μm-aperture 10-element arrays, the beam pattern is in-phase and diffraction-limited with 70% (75%) of the power residing in the main lobe. Single-frequency operation is obtained from 9640-9652 /spl Aring/, over a temperature range of approximately 20/spl deg/C, side-mode suppression ratios /spl ges/20 dB are recorded up to 2×threshold.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser frequency stability; laser mode locking; laser modes; semiconductor laser arrays; semiconductor lasers; waveguide lasers; 20 C; 2nd-order distributed-feedback gratings; 40 to 60 mum; 9640 to 9652 A; InGaAs-InGaP-GaAs; ROW-DFB arrays; ROW-DFB diode laser arrays; beam pattern; diffraction-limited; in-phase; large-aperture index-guided devices; main lobe; resonant antiguided phase-locked InGaAs-InGaP-GaAs diode-laser arrays; side-mode suppression ratios; single-frequency; single-spatial-mode; stable single-spatial-mode operation; truly single-mode; Apertures; Diffraction; Diode lasers; Frequency; Gratings; Laser modes; Optical arrays; Phased arrays; Power generation; Semiconductor laser arrays;
Journal_Title :
Photonics Technology Letters, IEEE
