DocumentCode :
755455
Title :
Regime where zero-bias is the low-power solution for digitally modulated laser diodes
Author :
Chen, Leonard P. ; Lau, Kam K.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Volume :
8
Issue :
2
fYear :
1996
Firstpage :
185
Lastpage :
187
Abstract :
We demonstrate that when a laser diode is digitally modulated with zero-bias, the average electrical power consumption can be less than a threshold-biased scheme for the same bit error rate. We find that the power consumption of large threshold >10 mA lasers with zero-bias is comparable to or less than with threshold-bias modulation as long as B/spl tau/<1/ln(2), where B and /spl tau/ are the bit rate and the laser´s carrier lifetime, respectively. Experiments with a buried crescent laser diode confirm this claim at both 300 K and 77 K. The power penalty of zero-bias at higher bit rates is also discussed.
Keywords :
carrier lifetime; electro-optical modulation; error statistics; laser noise; optical modulation; power consumption; semiconductor lasers; 10 mA; 300 K; 77 K; average electrical power consumption; bit error rate; buried crescent laser diode; carrier lifetime; digital modulation; digitally modulated laser diodes; low-power solution; power consumption; power penalty; threshold-biased scheme; zero-bias; Bit error rate; Bit rate; Delay effects; Digital modulation; Diode lasers; Energy consumption; Laser noise; Optical receivers; Photoconductivity; Power lasers;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/68.484235
Filename :
484235
Link To Document :
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