Temperature analysis and characteristics of highly strained InGaAs-GaAsP-GaAs (λ > 1.17 μm) quantum-well lasers

Characteristic temperature coefficients of the threshold current (T₀) and the external differential quantum efficiency (T₁) are studied as simple functions of the temperature dependence of the physical parameters of the semiconductor lasers. Simple expressions of characteristic temperature coefficients of the threshold current (T₀) and the external differential quantum efficiency (T₁) are expressed as functions as physical parameters and their temperature dependencies. The parameters studied here include the threshold (J_th) and transparency (J_tr ) current density, the carrier injection efficiency (η_inj ) and external (η_d) differential quantum efficiency, the internal loss (α_i), and the material gain parameter (g_o). The temperature analysis is performed on low-threshold current density (λ = 1.17-1.19 μm) InGaAs-GaAsP-GaAs quantum-well lasers, although it is applicable to lasers with other active-layer materials. Analytical expressions for T ₀ and T₁ are shown to accurately predict the cavity length dependence of these parameters for the InGaAs active lasers