High-temperature electrical characteristics of GaAs MESFETs (25-400°C)

Author

Shoucair, F.S. ; Ojala, Pekka K.

Author_Institution

Dept. of Electr. Eng., Brown Univ., Providence, RI, USA

Volume

39

Issue

7

fYear

1992

fDate

7/1/1992 12:00:00 AM

Firstpage

1551

Lastpage

1557

Abstract

The effects of elevated ambient and substrate temperatures (25°C up to 400°C) on the electrical characteristics of integrated GaAs MESFETs in a state-of-the-art commercial technology are reported. The focus is on the large- and small-signal parameters of the transistors. The existence of zero-temperature-coefficient drain currents is demonstrated analytically and experimentally for enhancement- and for depletion-mode GaAs MESFETs. The data show that, while GaAs MESFETs generally display degradation mechanisms similar to those of silicon MOSFETs with increasing temperature, they incur several additional effects, prominent among which are increased gate leakage currents, lowered Schottky-barrier height, decreased large- and small-signal (gate) input resistances, decreased sensitivity to sidegating and backgating up to approximately 200°C, and increased small-signal drain resistance

Keywords

III-V semiconductors; Schottky effect; Schottky gate field effect transistors; gallium arsenide; 25 to 400 degC; GaAs; MESFETs; Schottky-barrier height; ambient temperatures, III-V semiconductors; backgating; degradation mechanisms; depletion mode; drain resistance; electrical characteristics; enhancement model; gate leakage currents; input resistances; large-signal parameters; sidegating; small-signal parameters; substrate temperatures; zero-temperature-coefficient drain currents; Aerospace electronics; Electric variables; Gallium arsenide; Integrated circuit technology; Leakage current; MESFETs; Silicon; Space exploration; Space technology; Temperature;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.141218

Filename

141218