Numerical analysis of the photoeffects in GaAs MESFET´s

Author

Lo, Shih-Hsien ; Lee, Chien-Ping

Author_Institution

Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

39

Issue

7

fYear

1992

fDate

7/1/1992 12:00:00 AM

Firstpage

1564

Lastpage

1570

Abstract

The photoeffects on the I-V characteristics of GaAs MESFETs have been studied by a two-dimensional numerical method. It is theoretically verified that the photovoltaic effect occurring at the channel/substrate interface is responsible for the substantial increase of the drain current. The reverse gate current due to illumination is caused by sweep-out by the high electrical field in the gate depletion region, where a large gradient in the depth profile of the hole Fermi energy is found. For devices with a lightly doped n-type buffer layer, the increase of the drain current is less than for devices without a buffer layer, but is still substantial

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; photovoltaic effects; semiconductor device models; GaAs; I-V characteristics; III-V semiconductors; MESFETs; channel/substrate interface; depth profile; drain current; electrical field; gate depletion region; hole Fermi energy; lightly doped n-type buffer layer; photovoltaic effect; reverse gate current; sweep-out; two-dimensional numerical method; Buffer layers; Charge carrier processes; Current density; Electron traps; Gallium arsenide; Lighting; MESFETs; Numerical analysis; Optical control; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.141220

Filename

141220