Device modeling and simulations toward sub-10 nm semiconductor devices

Author

Sano, Nobuyuki ; Hiroki, Akira ; Matsuzawa, Kazuya

Author_Institution

Inst. of Appl. Phys., Univ. of Tsukuba, Japan

Volume

1

Issue

1

fYear

2002

fDate

3/1/2002 12:00:00 AM

Firstpage

63

Lastpage

71

Abstract

This paper overviews the fundamental problems encountered in device modeling and simulations of sub-10 nm Si metal-oxide-semiconductor field-effect-transistors (MOSFETs). We focus on the two fundamental problems: the quantum effects and the effects associated with the long-range Coulomb potential. It is pointed out that these problems are profoundly related to the basic principles of device physics and even pose a question on the validity of the basic transport equation which the present device simulations are based on. We also review various approaches and methods taken to tackle those problems

Keywords

MOSFET; Monte Carlo methods; electric potential; electron transport theory; elemental semiconductors; many-body problems; nanotechnology; quantum theory; semiconductor device models; silicon; simulation; 10 nm; Si; Si MOSFETs; device modeling; device simulations; drift-diffusion; electron transport; field-effect transistors; long-range Coulomb potential; many-body effects; quantum effects; sub-10 nm semiconductor devices; Analytical models; Cities and towns; Electrons; Equations; Helium; MOSFETs; Monte Carlo methods; Physics; Quantization; Semiconductor devices;

fLanguage

English

Journal_Title

Nanotechnology, IEEE Transactions on

Publisher

ieee

ISSN

1536-125X

Type

jour

DOI

10.1109/TNANO.2002.1005427

Filename

1005427