DocumentCode :
755631
Title :
Highly birefringent and monomode GaAlAs-GaAs planar optical waveguide
Author :
Khalfallah, Sabry ; Legros, Rene ; Munoz-Yague, A.
Author_Institution :
Lab. d´´Anal. et d´´Archit. des Syst., CNRS, Toulouse, France
Volume :
8
Issue :
2
fYear :
1996
Firstpage :
233
Lastpage :
235
Abstract :
A novel optical waveguide exhibiting a layered core region is proposed. Owing to the original design of the core stack and form birefringence in the multilayer, a waveguide supporting both TE and TM lowest-order modes with high confinement has been obtained. It has been designed, fabricated, and characterized and presents a modal birefringence greater than 0.01, which is in good agreement with the calculated values.
Keywords :
III-V semiconductors; aluminium compounds; birefringence; gallium arsenide; optical design techniques; optical fabrication; optical films; optical planar waveguides; semiconductor thin films; GaAlAs-GaAs; TE lowest-order modes; TM lowest-order modes; core stack; form birefringence; high confinement; highly birefringent; layered core region; modal birefringence; monomode GaAlAs-GaAs planar optical waveguide; multilayer; optical waveguide; Birefringence; Coherence; Gallium arsenide; Nonhomogeneous media; Optical filters; Optical planar waveguides; Optical waveguides; Planar waveguides; Substrates; Tellurium;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/68.484251
Filename :
484251
Link To Document :
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