DocumentCode :
755730
Title :
Stark effect on absorption of CdZnSSe-ZnSSe quantum wells
Author :
Law, K.K. ; Smekalin, K. ; Haugen, G.M. ; U´Ren, G.D. ; Haase, M.A.
Author_Institution :
Photonics Res. Lab., 3M Center, St. Paul, MN, USA
Volume :
8
Issue :
2
fYear :
1996
Firstpage :
263
Lastpage :
265
Abstract :
We present the measurements of room-temperature electroabsorption in CdZnSSe-ZnSSe semiconductor quantum wells that exhibit prominent excitonic absorption peaks in the wavelength region around 500 nm. The electroabsorption of these wide-band-gap quantum welts primarily stems from ionization of the room temperature excitons. Despite the large exciton linewidths in these structures, the magnitudes of field-induced absorption changes and absorption contrasts are sufficient for pragmatic applications in optical information processing systems in the blue-green spectral range.
Keywords :
II-VI semiconductors; cadmium compounds; electroabsorption; excitons; light absorption; optical information processing; quantum confined Stark effect; semiconductor quantum wells; zinc compounds; 500 nm; CdZnSSe-ZnSSe; CdZnSSe-ZnSSe quantum wells; CdZnSSe-ZnSSe semiconductor quantum wells; Stark effect; absorption contrasts; blue-green spectral range; field-induced absorption changes; ionization; large exciton linewidths; optical information processing systems; prominent excitonic absorption peaks; room temperature excitons; room-temperature electroabsorption; wide-band-gap quantum welts; Absorption; Excitons; Information processing; Molecular beam epitaxial growth; Optical arrays; Optical buffering; Optical modulation; Optical recording; Optical surface waves; Stark effect;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/68.484261
Filename :
484261
Link To Document :
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