Thin-film inverted MSM photodetectors

Author

Vendier, O. ; Jokerst, N.M. ; Leavitt, R.P.

Author_Institution

Microelectron. Res. Center, Georgia Inst. of Technol., Atlanta, GA, USA

Volume

8

Issue

2

fYear

1996

Firstpage

266

Lastpage

268

Abstract

To improve the external quantum efficiency and maintain the high speed of metal-semiconductor-metal (MSM) photodetectors, a thin film inverted MSM (I-MSM), which is separated from the growth substrate, has fingers on the bottom of the device, and is bonded to a silicon host substrate, is reported for the first time. This device optimizes the tradeoff between speed and responsivity, demonstrating the improvement in responsivity that can be achieved using an I-MSM. The photodetector time domain response at /spl lambda/=1.3 μm is 50 ps FWHM, with a 34 ps rise time and a 85 ps fall time.

Keywords

integrated optics; metal-semiconductor-metal structures; optical films; optimisation; photodetectors; 1.3 mum; 34 ps; 50 ps; 85 ps; external quantum efficiency; fall time; growth substrate; high speed; metal-semiconductor-metal photodetectors; photodetector time domain response; responsivity; rise time; silicon host substrate; speed; thin-film inverted MSM photodetectors; Capacitance; Computer aided manufacturing; Electrodes; Fingers; Integrated circuit packaging; Lighting; PIN photodiodes; Photodetectors; Shadow mapping; Transistors;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.484262

Filename

484262