Title :
A 13-Gb/s pin-PD/decision circuit using InP-InGaAs double-heterojunction bipolar transistors
Author :
Yoneyama, M. ; Sano, E. ; Yamahata, S. ; Matsuoka, Y.
Author_Institution :
NTT LSI Labs., Kanagawa, Japan
Abstract :
A simplified pin-PD/decision circuit (PD-DEC) has been monolithically integrated with double-heterojunction bipolar transistors. A 13-Gb/s operation is successfully achieved. The PD-DEC has a sensitivity of -9.9 dBm for a data rate of 10 Gb/s at a bit-error rate of 1×10/sup -9/. These are the highest operating speed and sensitivity ever achieved by a monolithically integrated pin-PD/decision circuit for a 1.55 μm wavelength.
Keywords :
III-V semiconductors; bipolar integrated circuits; gallium arsenide; indium compounds; integrated optoelectronics; p-i-n photodiodes; photodetectors; sensitivity; 1.55 mum; 10 Gbit/s; 13 Gbit/s; InP-InGaAs; InP-InGaAs double-heterojunction bipolar transistors; PD-DEC; bit-error rate; data rate; double-heterojunction bipolar transistors; highest operating speed; monolithically integrated; monolithically integrated pin-PD/decision circuit; photodetectors; photodiodes; pin-PD/decision circuit; sensitivity; Bipolar transistors; Bit error rate; Circuits; Clocks; Master-slave; Noise reduction; Optical buffering; Optical noise; Optical sensors; Voltage;
Journal_Title :
Photonics Technology Letters, IEEE
