• DocumentCode
    755787
  • Title

    Comparison of Simple Approximations and Numerical Solutions for the Threshold Voltage of Ion-Implanted Long-Channel MOSFET´s

  • Author

    Brodfuehrer, Brian P. ; Galloway, Kenneth F. ; Wilson, Charles L.

  • Volume
    27
  • Issue
    1
  • fYear
    1984
  • Firstpage
    3
  • Lastpage
    6
  • Abstract
    The very simple approximations used for calculating the threshold voltage shifts for ion-implanted long-channel MOSFET´s in classroom discussions are compared to the results of a more exact numerical simulation. Limited experimental measurements are compared to the calculated threshold voltage shifts.
  • Keywords
    Channel bank filters; Doping profiles; Implants; MOSFET circuits; NIST; Numerical simulation; Physics; Poisson equations; Silicon; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Education, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9359
  • Type

    jour

  • DOI
    10.1109/TE.1984.4321649
  • Filename
    4321649
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=755787