Title :
Comparison of Simple Approximations and Numerical Solutions for the Threshold Voltage of Ion-Implanted Long-Channel MOSFET´s
Author :
Brodfuehrer, Brian P. ; Galloway, Kenneth F. ; Wilson, Charles L.
Abstract :
The very simple approximations used for calculating the threshold voltage shifts for ion-implanted long-channel MOSFET´s in classroom discussions are compared to the results of a more exact numerical simulation. Limited experimental measurements are compared to the calculated threshold voltage shifts.
Keywords :
Channel bank filters; Doping profiles; Implants; MOSFET circuits; NIST; Numerical simulation; Physics; Poisson equations; Silicon; Threshold voltage;
Journal_Title :
Education, IEEE Transactions on
DOI :
10.1109/TE.1984.4321649
