Title :
New hot-carrier degradation mode and lifetime prediction method in quarter-micrometer PMOSFET
Author :
Tsuchiya, Toshiaki ; Okazaki, Yukio ; Miyake, Masayasu ; Kobayashi, Toshio
Author_Institution :
NTT LSI Lab., Kanagawa, Japan
fDate :
2/1/1992 12:00:00 AM
Abstract :
Hot-carrier-induced device degradation has been studied for quarter-micrometer level buried-channel PMOSFETs. It was found that the major hot-carrier degradation mode for these small devices is quite different from that previously reported, which was caused by trapped electrons injected into the gate oxide. The new degradation mode is caused by the effect of interface traps generated by hot hole injection into the oxide near the drain in the saturation region. DC device lifetime for the new mode can be evaluated using substrate current rather than gate current as a predictor. Interface-trap generation due to hot-hole injection will become the dominant degradation mode in future PMOSFETs
Keywords :
hot carriers; insulated gate field effect transistors; reliability; 0.25 micron; DC device lifetime; buried-channel PMOSFETs; device lifetime prediction; effect of interface traps; hot hole injection; hot-carrier degradation mode; interface trap generation; lifetime prediction method; quarter-micrometer PMOSFET; scaling; substrate current; Electron traps; Fabrication; Hot carriers; MOSFET circuits; Prediction methods; Substrate hot electron injection; Thermal degradation; Thermal stresses; Transconductance; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
