Title :
Explaining the amplitude of RTS noise in submicrometer MOSFETs
Author :
Simoen, Eddy ; Dierickx, Bart ; Claeys, Cor L. ; Declerck, Gilbert J.
Author_Institution :
IMEC, Leuven, Belgium
fDate :
2/1/1992 12:00:00 AM
Abstract :
A simple-man´s model for the random telegraph signal (RTS) noise amplitude in a submicrometer MOSFET is presented. It is shown that the channel resistance modulation for a specific trap can be expressed as a product of the normalized scattering cross section and of the fractional conductivity change. The model qualitatively describes the experimental temperature and drain current dependence of the RTS amplitude and allows evaluation of the influence of the trap location and nature on the wide scatter in values observed
Keywords :
electron device noise; insulated gate field effect transistors; semiconductor device models; MOSFETs; RTS noise; channel resistance modulation; drain current dependence; fractional conductivity change; normalized scattering cross section; random telegraph signal noise; submicrometer; temperature dependence; trap location influence; 1f noise; Amplitude estimation; Conductivity; Fluctuations; Helium; MOSFETs; Noise level; Scattering; Telegraphy; Temperature dependence;
Journal_Title :
Electron Devices, IEEE Transactions on
