DocumentCode
755875
Title
The floating gate measurement technique for characterization of capacitor matching
Author
Tuinhout, Hans P. ; Elzinga, Heinze ; Brugman, J.T. ; Postma, Fokke
Author_Institution
Philips Res. Lab., Eindhoven, Netherlands
Volume
9
Issue
1
fYear
1996
fDate
2/1/1996 12:00:00 AM
Firstpage
2
Lastpage
8
Abstract
This paper discusses a new method for characterization of matching of capacitors using the so-called floating gate capacitance measurement method. After an introduction of this measurement method, modifications are discussed that were implemented to boost the measurement accuracy and repeatability from its original thousands of ppm´s (0.1 to 0.3%) to values as low as 50 ppm (0.005%). Instrumental in these improvements are the introduction of a double slope measurement procedure to compensate for systematic offsets, as well as the use of repeated measurements and averaging to reduce the influence of the measurements system´s noise. The improved accuracy, including statistical characterization of the measurement system´s short term repeatability, are required for correct determination of capacitor matching of the extremely well-matching double-polysilicon capacitor structures that were used for this study
Keywords
capacitance measurement; capacitors; Si; averaging; capacitor matching; double slope method; double-polysilicon capacitors; floating gate capacitance measurement; noise; repeatability; statistical analysis; systematic offset compensation; Capacitance measurement; Circuit testing; Integrated circuit measurements; MOSFET circuits; Measurement techniques; Noise measurement; Semiconductor device measurement; Semiconductor device noise; Switched capacitor circuits; Voltage;
fLanguage
English
Journal_Title
Semiconductor Manufacturing, IEEE Transactions on
Publisher
ieee
ISSN
0894-6507
Type
jour
DOI
10.1109/66.484276
Filename
484276
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