• DocumentCode
    755875
  • Title

    The floating gate measurement technique for characterization of capacitor matching

  • Author

    Tuinhout, Hans P. ; Elzinga, Heinze ; Brugman, J.T. ; Postma, Fokke

  • Author_Institution
    Philips Res. Lab., Eindhoven, Netherlands
  • Volume
    9
  • Issue
    1
  • fYear
    1996
  • fDate
    2/1/1996 12:00:00 AM
  • Firstpage
    2
  • Lastpage
    8
  • Abstract
    This paper discusses a new method for characterization of matching of capacitors using the so-called floating gate capacitance measurement method. After an introduction of this measurement method, modifications are discussed that were implemented to boost the measurement accuracy and repeatability from its original thousands of ppm´s (0.1 to 0.3%) to values as low as 50 ppm (0.005%). Instrumental in these improvements are the introduction of a double slope measurement procedure to compensate for systematic offsets, as well as the use of repeated measurements and averaging to reduce the influence of the measurements system´s noise. The improved accuracy, including statistical characterization of the measurement system´s short term repeatability, are required for correct determination of capacitor matching of the extremely well-matching double-polysilicon capacitor structures that were used for this study
  • Keywords
    capacitance measurement; capacitors; Si; averaging; capacitor matching; double slope method; double-polysilicon capacitors; floating gate capacitance measurement; noise; repeatability; statistical analysis; systematic offset compensation; Capacitance measurement; Circuit testing; Integrated circuit measurements; MOSFET circuits; Measurement techniques; Noise measurement; Semiconductor device measurement; Semiconductor device noise; Switched capacitor circuits; Voltage;
  • fLanguage
    English
  • Journal_Title
    Semiconductor Manufacturing, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0894-6507
  • Type

    jour

  • DOI
    10.1109/66.484276
  • Filename
    484276