Charge carrier dynamic nonequilibrium in amorphous semiconductors

Author

Furlan, Joze

Author_Institution

Fac. of Electr. & Comput. Eng., Ljubljana Univ., Yugoslavia

Volume

39

Issue

2

fYear

1992

fDate

2/1/1992 12:00:00 AM

Firstpage

448

Lastpage

450

Abstract

Generation-recombination rates of free charge carriers in an amorphous semiconductor in dynamic nonequilibrium conditions are accompanied by corresponding rates of trapped carriers reflecting back the dynamic response of free carriers. Using the Shockley-Read-Hall generation-recombination model, the author develops the analytical approach to a set of four differential equations describing the rates of change of free and trapped electrons and holes in thermal nonequilibrium conditions in amorphous semiconductors. These equations associated with continuity, Poisson, and transport equations provide the necessary analytical tools for the investigation of the time dependence of charge carriers in amorphous semiconductors

Keywords

amorphous semiconductors; electrical conductivity of amorphous semiconductors and insulators; electron-hole recombination; Poisson equation; Shockley-Read-Hall generation-recombination model; amorphous semiconductors; analytical approach; continuity equation; differential equations; dynamic nonequilibrium conditions; free charge carriers; free electrons; free holes; thermal nonequilibrium conditions; transport equations; trapped electrons; trapped holes; Amorphous semiconductors; Charge carrier processes; Charge carriers; Crystallization; Electron traps; Energy capture; Poisson equations; Radiative recombination; Spontaneous emission; Steady-state;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.121706

Filename

121706