Title :
A model too hot to handle? [MOSFET model]
Author :
Fossum, Jerry G.
Author_Institution :
Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA
fDate :
5/1/2002 12:00:00 AM
Abstract :
The physics/process-based UFPDB compact model, unified for PDSOI and bulk-Si MOSFETs, has been overviewed. Its truly physical nature was exemplified, and the afforded straightforward evaluation of its single small set of parameters, based on device structure, was discussed. Its predictive capability was demonstrated for devices and circuits, the latter via UFPDB/Spice3 ring-oscillator simulations that benchmarked scaled PDSOI and bulk-Si CMOS technologies, projecting a sustained performance advantage for the former as the devices are scaled to their limit near Lgate=60 nm. Based on the author´s development and applications of UFPDB, it is strongly believed that this truly physics-based compact MOSFET model can and should replace the empirical standard, for PDSOI and bulk-Si CMOS at present, and perhaps in the future for fully depleted SOI and double-gate devices
Keywords :
CMOS integrated circuits; MOSFET; SPICE; circuit CAD; circuit simulation; semiconductor device models; silicon-on-insulator; 60 nm; CAD; CMOS circuit simulation; PDSOI MOSFETs; Si-SiO2; UFPDB/Spice3 ring-oscillator simulations; bulk-Si CMOS technologies; bulk-Si MOSFETs; device scaling; double-gate devices; fully depleted SOI devices; model parameter set; performance advantage; physical MOSFET model; physics-based compact MOSFET model; physics/process-based UFPDB compact model; predictive capability; scaled PDSOI CMOS technologies; CMOS technology; Circuit simulation; Impact ionization; Integrated circuit modeling; MOSFET circuits; Nonlinear equations; Partial discharges; Physics; Semiconductor device modeling; Tunneling;
Journal_Title :
Circuits and Devices Magazine, IEEE
DOI :
10.1109/MCD.2002.1005646
