A model too hot to handle? [MOSFET model]

Author

Fossum, Jerry G.

Author_Institution

Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA

Volume

18

Issue

3

fYear

2002

fDate

5/1/2002 12:00:00 AM

Firstpage

26

Lastpage

31

Abstract

The physics/process-based UFPDB compact model, unified for PDSOI and bulk-Si MOSFETs, has been overviewed. Its truly physical nature was exemplified, and the afforded straightforward evaluation of its single small set of parameters, based on device structure, was discussed. Its predictive capability was demonstrated for devices and circuits, the latter via UFPDB/Spice3 ring-oscillator simulations that benchmarked scaled PDSOI and bulk-Si CMOS technologies, projecting a sustained performance advantage for the former as the devices are scaled to their limit near L_gate=60 nm. Based on the author´s development and applications of UFPDB, it is strongly believed that this truly physics-based compact MOSFET model can and should replace the empirical standard, for PDSOI and bulk-Si CMOS at present, and perhaps in the future for fully depleted SOI and double-gate devices

Keywords

CMOS integrated circuits; MOSFET; SPICE; circuit CAD; circuit simulation; semiconductor device models; silicon-on-insulator; 60 nm; CAD; CMOS circuit simulation; PDSOI MOSFETs; Si-SiO₂; UFPDB/Spice3 ring-oscillator simulations; bulk-Si CMOS technologies; bulk-Si MOSFETs; device scaling; double-gate devices; fully depleted SOI devices; model parameter set; performance advantage; physical MOSFET model; physics-based compact MOSFET model; physics/process-based UFPDB compact model; predictive capability; scaled PDSOI CMOS technologies; CMOS technology; Circuit simulation; Impact ionization; Integrated circuit modeling; MOSFET circuits; Nonlinear equations; Partial discharges; Physics; Semiconductor device modeling; Tunneling;

fLanguage

English

Journal_Title

Circuits and Devices Magazine, IEEE

Publisher

ieee

ISSN

8755-3996

Type

jour

DOI

10.1109/MCD.2002.1005646

Filename

1005646